A Schottky diode, also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal.
Typical metals used are molybdenum, platinum, chromium or tungsten, and certain silicides (e.g., palladium silicide and platinum silicide), whereas the semiconductor would typically be n-type silicon.
Schottky barrier diodes have a low forward voltage drop and a very fast switching action (typ. 5 ns).
A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
Lately I purchased a bunch of BAT85 Schottky barrier diodes. A typical value for its forward voltage is 200 mV.
I replaced four Ge diodes by BAT85 Schottky diodes in my field strength meter. http://pa2rf.blogspot.com/2020/07/fieldstrength-meter.html?m=1 .
The performance of the meter has certainly increased (higher sensitivity).
More info:
https://en.wikipedia.org/wiki/Schottky_diode
Bunch of BAT85 Schottky diodes
Interessant. Zeker als vervanger voor de GE diodes die ik altijd gebruik in de veldsterktemeters. Bedankt voor de info. 73, Bas
ReplyDeleteGraag gedaan Bas. Bij Aliexpress voor een paar cent per stuk...
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