IRF MOSFET characteristics

I have categorized the main characteristics of most used IRF N-channel MOSFETs for RF purposes.

 

The table below might be useful for you when you are looking for the proper FET in your
MF/HF end stage. 

FET             Id       Vds      Rds      Cin
                     A       V        ohm    pF
===================================
IRF510       5,6   100     0,54   200
IRF520       9,7   100     0,2     330
IRF530       14    100     0,14   600
IRF540       33    100     0,04   890
IRF610       3,3   200     1,5     200
IRF620       7      200     1,2     460
IRF630       9      200      0,3    960
IRF640       18    200     0,15  1850
IRF710        2     400     3,6     200
IRF730        7     400     1        620
IRF740       10    400    0,55   1400


IRFs ending with IRFx10 have the smallest input capacitance: 200 pF
Those FETs can be used in PA's with operation frequency up till 15 MHz.
For MG experiments (appr. 500 kHz) I have succesfully used the IRF520 and IRF620.
Both work fine on this low frequency.
Input capacitance is often specified at Vds=25V and Vgs=0V.

Note: I have used various internet sources that were sometime controdictionary.